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AO3400 is a popular SMD MOSFET produced by Alpha & Omega Semiconductor. The AO3400 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS (ON). This device is suitable for use as a load switch or in PWM applications. AO3400 Pinout AO3400 Pinout AO3400 CAD Model AO3400 Symbol AO3400 Footprint
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2N7002 MOSFET is enclosed in the SMD SOT-23/TO-236 package and its THT version 2N7000 comes in the TO-92 package. P channel BS520P is its counterpart.. 2N7002 MOSFET Pinout, Equivalent, Specs & Datasheet. April 1, 2023 April 11, 2022 by Ankit Negi. 2N7002 is an N-channel Logic level MOSFET capable of switching 60 V.
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3-PowerSMD, Flat Leads 3-SMD, Flat Lead 3-SMD, Flat Leads 3-SMD, No Lead 3-SMD, Non-Standard 3-SMD, SOT-23-3 Variant 3-UDFN 3-UFDFN 3-XDFN Exposed Pad 3-XDFN 3-XFDFN 3-XFLGA.. MOSFET (Metal Oxide) 50 V: 180mA (Ta) 10V: 7.5Ohm @ 100mA, 10V: 2.1V @ 250µA: 0.35 nC @ 5 V: ±20V: 36 pF @ 25 V-350mW (Ta), 1.14W (Tc)-55°C ~ 150°C (TJ) Automotive.
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MOSFET - Power, Single P-Channel, SOT-23-50 V, 10 BSS84L, BVSS84L, SBSS84L • SOT−23 Surface Mount Package Saves Board Space • BV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant
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Specifications Given below are the technical specifications of 2N7000 in a Tabular form. 2N7000 Specs Table 2N7000 Equivalent MOSFET BS170, 2N7002/NDS7002A (SMD version), IRFZ44, IRF540N, and IRF3205 are the equivalent 2N7000 N-channel MOSFET. P-Channel Counterpart of 2N7000 BS520P N channel MOSFET is complimentary pair of 2N7000 N channel MOSFET.
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April 11, 2022 by Ankit Negi BS170 is an N-channel Enhancement MOSFET capable of switching 60 V. It has a maximum drain current rating of 500 mA (continuous) and 1200 mA (pulsed), Drain to Source resistance of 1.2 ohms (typical), and maximum power dissipation rating of 830 mW.
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BSS138. These N−Channel enhancement mode field effect transistors are produced using onsemi's proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current.
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SMD MOSFET Max. Static DS Max. Static DS Gate Th. Drain Cut-Drain- Gate- Max. Resistance Voltage Voltage off Device Source Source Drain Current Marking Voltage VoltageCurrentVGS=10V VGS=5V VGS=10V VGS=5V VDS=VGS Code ID=0.25m VDS=60V ID=500m ID=50mA ID=500m ID=50mA VGS=0V VDSS(V) VGS(V) ID(A) RDS(ON)(Ω) VDS(ON)(V) VGS(th)(V) IDSS(μA) Part No.
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1 Answer Sorted by: 3 Most likely explanation is this: Manufacturer already owns production equipment for SO8 packages, they have performed all qualification tests, etc. Therefore, it's cheaper to use SO8. SO8 also has half-decent thermal characteristics if you connect all D pins to a copper plane (30°C/W between chip to leads).
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The TC426/TC427/TC428 are dual CMOS high-speed drivers. A TTL/CMOS input voltage level is translated into a rail-to-rail output voltage level swing. The CMOS output is within 25 mV of ground or positive supply. The low-impedance, high-current driver outputs swing a 1000 pF load 18V in 30 nsec.
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Pin Configuration Features N-Channel MOSFET with low on-state resistance Continuous Drain Current (ID) is 200mA Drain Source Voltage (VDS) is 60V On-state Resistance is <5Ω Minimum Gate threshold voltage (VGS-th) is 1V Maximum Gate threshold voltage (VGS-th) is 3V Turn ON and Turn off time is 15ns and 8ns each
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N-Channel MOSFET G S ORDERING INFORMATION Package SOT-23 Lead (Pb)-free and halogen-free Si2300DS-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-source voltage VDS 30 V Gate-source voltage VGS ± 12 Continuous drain current (TJ = 150 °C) TC = 25 °C ID 3.6 a A TC = 70 °C 3 TA = 25 °C 3.
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Support & training TI E2E™ forums with technical support from TI engineers Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use. TI's CSD18540Q5B is a 60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.2 mOhm. Find parameters, ordering and quality information
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MOSFET - N-Channel, Small Signal, SOT-23 60 V, 115 mA 2N7002L, 2V7002L Features • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol.
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The BSS138 is an SMD Package Logic Level N-Channel MOSFET with low on-state resistance (3.5Ω) and low input capacitance (40 pF). Adding to this the Mosfet can also switching at high speed of 20ns. Due to the low threshold voltage and high switching speed this Mosfet is commonly used in level shifter circuits. Pin Configuration Features